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| Hyper TOPLED(R) Hyper-Bright LED LS T676, LA T676, LO T676 LY T676 Besondere Merkmale q q q q q q Gehausebauform: P-LCC-2 Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (8-mm-Filmgurt) VPL06724 Features q q q q q q P-LCC-2 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) Semiconductor Group 1 11.96 LS T676, LA T676, LO T676 LY T676 Typ Emissionsfarbe Color of Emission Type Farbe der Lichtaustrittsflache Color of the Light Emitting Area colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 20 mA I V (mcd) 25 40 63 100 40 40 63 100 160 63 40 63 100 160 63 40 63 100 160 63 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... 200 80 125 200 320 320 125 200 320 500 320 125 200 320 500 320 125 200 320 500 Luminous Flux IF = 20 mA V (mlm) 180 (typ.) 300 (typ.) 450 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) 300 (typ.) 450 (typ.) 600 (typ.) 300 (typ.) 450 (typ.) 700 (typ.) - Ordering Code LS T676-NR LS T676-P LS T676-Q LS T676-R LS T676-PS LA T676-PS LA T676-Q LA T676-R LA T676-S LA T676-QT LO T676-PS LO T676-Q LO T676-R LO T676-S LO T676-QT LY T676-PS LY T676-Q LY T676-R LY T676-S LY T676-QT super-red Q62703-Q3135 Q62703-Q3136 Q62703-Q3137 Q62703-Q3138 Q62703-Q3139 Q62703-Q3423 Q62703-Q3424 Q62703-Q3425 Q62703-Q3426 Q62703-Q3427 Q62703-Q3066 Q62703-Q3064 Q62703-Q3065 Q62703-Q3091 Q62703-Q3125 Q62703-Q3855 Q62703-Q3159 Q62703-Q3160 Q62703-Q3404 Q62703-Q3161 amber colorless clear orange colorless clear yellow colorless clear Streuung der Lichtstarke in einer Verpackungseinheit I V max / I V min 2.0. Luminous intensity ratio in one packaging unit I V max / I V min 2.0. Semiconductor Group 2 LS T676, LA T676, LO T676 LY T676 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspanung1) Reverse voltage1) Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgroe 16 mm2) mounted on PC board*) (pad size 16 mm2) 1) 1) Symbol Symbol Werte Values LS, LA, LO LY - 55 ... + 100 - 55 ... + 100 + 100 30 1 20 0.2 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 80 3 55 V mW Rth JA 500 K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. *) PC-board: FR4 Semiconductor Group 3 LS T676, LA T676, LO T676 LY T676 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 20 mA Dominantwellenlange Dominant wavelength IF = 20 mA Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Durchlaspannung Forward voltage IF = 20 mA Sperrstrom Reverse current VR = 3 V Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) (typ.) (typ.) 2 (typ.) VF (max.) VF (typ.) IR (max.) IR TC TC (typ.) (typ.) - 1.95 - 1.78 - 1.67 - 2.51 mV/K 645 LA 622 Werte Values LO 610 LY 591 nm Einheit Unit 632 615 605 587 nm 16 16 16 15 nm 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 120 2.0 2.6 0.01 10 Grad deg. V V A A Temperaturkoeffizient von dom (IF = 20 mA) Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient of peak, IF = 20 mA 0.014 0.062 0.067 0.096 nm/K 0.14 0.13 0.13 0.13 nm/K Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 4 LS T676, LA T676, LO T676 LY T676 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative spectral emission V() = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 5 LS T676, LA T676, LO T676 LY T676 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 C Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) Relative Lichtstarke IV / IV(25 C ) = f (TA) Relative luminous intensity IF = 10 mA Semiconductor Group 6 LS T676, LA T676, LO T676 LY T676 Zulassige Impulsbelastbarkeit If = f(tp) Permissible pulse handling capability LO, LA, LS D = Parameter; TA = 25 C Zulassige Impulsbelastbarkeit If = f(tp) Permissible pulse handling capability LY D = Parameter; TA = 25 C Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennung: abgeschragte Ecke Cathode mark: bevelled edge Semiconductor Group 7 GPL06724 |
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